Manufacture | Part Number | Description | |
Infineon |
012N08N5 | IPT012N08N5 MOSFET OptiMOSTM5Power-Transistor, | |
Infineon |
BSC047N08NS3 | ||
Infineon |
IDWD40G120C5 | IDWD40G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W | |
Infineon |
BSC028N06LS3 | BSC028N06LS3G MOSFET OptiMOSTM3Power-Transistor | |
Infineon |
040N08NS | BSC040N08NS5 MOSFET OptiMOSTM5Power-Transistor, | |
Infineon |
FF900R12ME7_B11 | FF900R12ME7_B11 EconoDUAL™3ModulmitTRENCHSTOP | |
Infineon |
010NE2LS | BSC010NE2LS MOSFET OptiMOSTMPower-MOSFET,25V F | |
Infineon |
1EDN8550 | EiceDRIVER™ 1EDNx550 Single-channel high-side an | |
Infineon |
1EDN7550 | EiceDRIVER™ 1EDNx550 Single-channel high-side an | |
Infineon |
1EDN7550U | EiceDRIVER™ 1EDNx550 Single-channel high-side an | |
Infineon |
IRF7769L1 | IRF7769L1TRPbF Applications RoHS Compliant, | |
STMicroelectronics |
STM32H750ZB | STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 32 | |
STMicroelectronics |
STM32WB35CE | STM32WB55xx STM32WB35xx Multiprotocol wireless 32- | |
Infineon |
1EDN8550B | EiceDRIVER™ 1EDNx550 Single-channel high-side an | |
Infineon |
IGLD60R070D1 | IGLD60R070D1 IGLD60R070D1 600V CoolGaN™ enhance | |
International Rectifier |
IRGPS46160D | VCES = 600V IC = 160A, TC = 100°C tSC 5µs, | |
Infineon |
1EDN7550B | EiceDRIVER™ 1EDNx550 Single-channel high-side an | |
Infineon |
IRFH8202TRPbF | VDSS 25 V RDS(on) max (@ VGS = 10V) Qg (typical | |
Infineon |
60S190D1 | IGT60R190D1S IGT60R190D1S 600V CoolGaN™ enhance | |
Infineon |
007N06N | IPT007N06N MOSFET OptiMOSTMPower-Transistor,60 | |
Infineon |
120M1045 | IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Tr | |
Infineon |
IPP045N10N3 | IPP045N10N3G MOSFET OptiMOSª3Power-Transistor, | |
Infineon |
IRFH8202 | VDSS 25 V RDS(on) max (@ VGS = 10V) Qg (typical | |
Infineon |
028N06LS | BSC028N06LS3G MOSFET OptiMOSTM3Power-Transistor | |
Infineon |
60R070D1 | IGOT60R070D1 IGOT60R070D1 600V CoolGaN™ enhance | |
Infineon |
BSC060N10NS3 |
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