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STD3NM60N

INCHANGE
Part Number STD3NM60N
Manufacturer INCHANGE
Title N-Channel MOSFET
Description Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 3.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resis...
Features
·Drain Current
  –ID= 3.3A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)
·100% avalanche tested
·Low input capacitance and gate charge
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switchi...

Published Dec 4, 2020
Datasheet PDF File STD3NM60N File

STD3NM60N   STD3NM60N   STD3NM60N  




STD3NM60N

STMicroelectronics
Part Number STD3NM60N
Manufacturer STMicroelectronics
Title N-channel Power MOSFET
Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a.
Features Order codes STD3NM60N VDSS @TJmax 650 V RDS(on) max. < 1.8 Ω ID 3.3 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance TAB 3 1 DPAK Applications
■ Switching applications Description This device is an N-channel Power MOSFET developed using the second.

Datasheet PDF File STD3NM60N File

STD3NM60N   STD3NM60N   STD3NM60N  






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