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IS42S16160G

ISSI
Part Number IS42S16160G
Manufacturer ISSI
Title 256Mb SYNCHRONOUS DRAM
Description IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 DECEMBER 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166...
Features
• Clock frequency: 200,166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: S...

Published Jan 1, 2019
Datasheet PDF File IS42S16160G File

IS42S16160G   IS42S16160G   IS42S16160G  




IS42S16160L

ISSI
Part Number IS42S16160L
Manufacturer ISSI
Title 256Mb SYNCHRONOUS DRAM
Description IS42S83200L, IS42S16160L IS45S83200L, IS45S16160L 32Meg x 8, 16Meg x16 ADVANCED INFORMATION 256Mb SYNCHRONOUS DRAM DECEMBER 2021 FEATURES • .
Features
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Seq.

Datasheet PDF File IS42S16160L File

IS42S16160L   IS42S16160L   IS42S16160L  




IS42S16160J

ISSI
Part Number IS42S16160J
Manufacturer ISSI
Title 256Mb SYNCHRONOUS DRAM
Description IS42S83200J, IS42S16160J IS45S83200J, IS45S16160J 32Meg x 8, 16Meg x16 SEPTEMBER 2020 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 1.
Features
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequenti.

Datasheet PDF File IS42S16160J File

IS42S16160J   IS42S16160J   IS42S16160J  




IS42S16160D

Integrated Silicon Solution
Part Number IS42S16160D
Manufacturer Integrated Silicon Solution
Title 256-MBIT SYNCHRONOUS DRAM
Description A0-A12 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O Syste.
Features
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Seque.

Datasheet PDF File IS42S16160D File

IS42S16160D   IS42S16160D   IS42S16160D  




IS42S16160C

ISSI
Part Number IS42S16160C
Manufacturer ISSI
Title 256Mb Single Data Rate Synchronous DRAM
Description IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,3.
Features - Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz<3-3-3>/-7:143MHz<3-3-3>/-75:133MHz<3-3-3> - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programma.

Datasheet PDF File IS42S16160C File

IS42S16160C   IS42S16160C   IS42S16160C  






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