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IRF1010E

International Rectifier
Part Number IRF1010E
Manufacturer International Rectifier
Title Power MOSFET
Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili...
Features uous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-3...

Published Apr 16, 2005
Datasheet PDF File IRF1010E File

IRF1010E   IRF1010E   IRF1010E  




IRF1010E

INCHANGE
Part Number IRF1010E
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E, IIRF1010E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancem.
Features
·Static drain-source on-resistance: RDS(on) ≤12mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=2.

Datasheet PDF File IRF1010E File

IRF1010E   IRF1010E   IRF1010E  






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