logo

BUZ71

Comset Semiconductors
Part Number BUZ71
Manufacturer Comset Semiconductors
Title N-Channel Enhancement Mode Power MOS Transistors
Description SEMICONDUCTORS BUZ71 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in ...
Features N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDS IDS IDM IAR EAS EAR ...

Published Dec 11, 2012
Datasheet PDF File BUZ71 File

BUZ71   BUZ71   BUZ71  




BUZ71

Siemens Semiconductor Group
Part Number BUZ71
Manufacturer Siemens Semiconductor Group
Title Power Transistor
Description BUZ 71 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 VD.
Features therwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.08 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS =.

Datasheet PDF File BUZ71 File

BUZ71   BUZ71   BUZ71  




BUZ71

STMicroelectronics
Part Number BUZ71
Manufacturer STMicroelectronics
Title N-CHANNEL POWER MOSFET
Description ® BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET™ POWER MOSFET T YPE BUZ71 s s s s s V DSS 50 V R DS(on) < 0.1 Ω ID 17 A TYPICAL RDS(o.
Features this datasheet. o o Value 50 50 ± 20 17 68 60 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ71 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR E.

Datasheet PDF File BUZ71 File

BUZ71   BUZ71   BUZ71  




BUZ71

INCHANGE
Part Number BUZ71
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·100% avalanche tested ·Min.
Features
·Low RDS(on)
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·High current , high speed switching
·Solenoid and relay drivers
·DC-DC & DC-AC converters
·ABSOLUTE MA.

Datasheet PDF File BUZ71 File

BUZ71   BUZ71   BUZ71  




BUZ71

Fairchild Semiconductor
Part Number BUZ71
Manufacturer Fairchild Semiconductor
Title N-Channel Power MOSFET
Description Data Sheet December 2001 BUZ71 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effec.
Features
• 14A, 50V
• rDS(ON) = 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging .

Datasheet PDF File BUZ71 File

BUZ71   BUZ71   BUZ71  




BUZ71

Intersil Corporation
Part Number BUZ71
Manufacturer Intersil Corporation
Title N-Channel Power MOSFET
Description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the.
Features
• 14A, 50V
• rDS(ON) = 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART N.

Datasheet PDF File BUZ71 File

BUZ71   BUZ71   BUZ71  






Since 2006. 0PDF.com,