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BUZ10

INCHANGE
Part Number BUZ10
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·175℃ operatin...
Features
·Drain Current
  –ID=23A@ TC=25℃
·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max)
·175℃ operating temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·High current , high speed switching
·Solenoid and relay driver...

Published Oct 18, 2020
Datasheet PDF File BUZ10 File

BUZ10   BUZ10   BUZ10  




BUZ10

STMicroelectronics
Part Number BUZ10
Manufacturer STMicroelectronics
Title N-Channel Power MOSFET
Description ® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) =.
Features datasheet. o o Value 50 50 ± 20 23 92 75 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C February 2000 1/8 BUZ10 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.0 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR E .

Datasheet PDF File BUZ10 File

BUZ10   BUZ10   BUZ10  




BUZ10

Siemens Semiconductor Group
Part Number BUZ10
Manufacturer Siemens Semiconductor Group
Title Power Transistor
Description BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VD.
Features ss otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.05 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA V.

Datasheet PDF File BUZ10 File

BUZ10   BUZ10   BUZ10  






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