Part Number A1964
Manufacturer INCHANGE
Title Silicon PNP Power Transistor
Description ·Collector­Emitter Breakdown Voltage­  : V(BR)CEO= ­160V(Min)  ·Good Linearity of hFE  ·Wide Area of Safe Operation  ·Complement to Type 2SC5248 ...
Features (BR)CEO  Collector­Emitter Breakdown Voltage  IC= ­1mA; IB= 0  IC= ­50μA; IE= 0  IE= ­50μA; IC= 0  ­160  V  V(BR)CBO  Collector­Base Breakdown Voltage  ­160  V  V(BR)EBO  Emitter­Base Breakdown Voltage  ­5  V  VCE(sat)  ICBO  Collector­Emitter Saturation Voltage  IC= ­1A; IB= ­0.1A  ...

Published Sep 18, 2014
Datasheet PDF File A1964 File

A1964   A1964   A1964  


Fairchild Semiconductor
Part Number A1962
Manufacturer Fairchild Semiconductor
Title 2SA1962
Description 2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audi.

• High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5242/FJA4313. Thermal and electrical Spice models are available. Same tr.

Datasheet PDF File A1962 File

A1962   A1962   A1962  

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