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2SK1918

Hitachi
Part Number 2SK1918
Manufacturer Hitachi
Title Silicon N-Channel MOSFET
Description 2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low...
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
• Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK19...

Published Nov 20, 2015
Datasheet PDF File 2SK1918 File

2SK1918   2SK1918   2SK1918  




2SK1918S

Hitachi
Part Number 2SK1918S
Manufacturer Hitachi
Title Silicon N-Channel MOSFET
Description 2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low.
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
• Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK19.

Datasheet PDF File 2SK1918S File

2SK1918S   2SK1918S   2SK1918S  




2SK1918L

Hitachi
Part Number 2SK1918L
Manufacturer Hitachi
Title Silicon N-Channel MOSFET
Description 2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low.
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
• Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK19.

Datasheet PDF File 2SK1918L File

2SK1918L   2SK1918L   2SK1918L  




2SK1917-MR

Fuji Electric
Part Number 2SK1917-MR
Manufacturer Fuji Electric
Title N-CHANNEL SILICON POWER MOSFET
Description 2SK1917-MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F-II SERIES Features High speed switching Low on-resistance No secondary breakdown L.
Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Applications Switching regulators UPS DC-DC converters General purpose power amplifier Outline Drawings TO-220F15 2.54 JEDEC EIAJ 3. Source SC-67 Maximum ratings and characteristics A.

Datasheet PDF File 2SK1917-MR File

2SK1917-MR   2SK1917-MR   2SK1917-MR  




2SK1917-M

INCHANGE
Part Number 2SK1917-M
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device per.
Features PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0 VSD Fo.

Datasheet PDF File 2SK1917-M File

2SK1917-M   2SK1917-M   2SK1917-M  






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