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2SK108

Toshiba
Part Number 2SK108
Manufacturer Toshiba (https://www.toshiba.com/)
Title Silicon P-Channel FET
Description ...
Features ...

Published Aug 30, 2016
Datasheet PDF File 2SK108 File

2SK108   2SK108   2SK108  




2SK1099

Inchange Semiconductor
Part Number 2SK1099
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable o.
Features ate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Forward On-Voltage IS=10A; VGS=0 tr Rise time ton Turn-on time tf Fall time VG.

Datasheet PDF File 2SK1099 File

2SK1099   2SK1099   2SK1099  




2SK1098-M

Fuji Electric
Part Number 2SK1098-M
Manufacturer Fuji Electric
Title N-channel MOS-FET
Description 2SK1098-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel.
Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 150V 0,5Ω 6A 30W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maxim.

Datasheet PDF File 2SK1098-M File

2SK1098-M   2SK1098-M   2SK1098-M  




2SK1096-MR

Fuji Electric
Part Number 2SK1096-MR
Manufacturer Fuji Electric
Title N-CHANNEL SILICON POWER MOSFET
Description .
Features .

Datasheet PDF File 2SK1096-MR File

2SK1096-MR   2SK1096-MR   2SK1096-MR  




2SK1095

INCHANGE
Part Number 2SK1095
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Eas.
Features
·With TO-220F packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(.

Datasheet PDF File 2SK1095 File

2SK1095   2SK1095   2SK1095  




2SK1095

Hitachi Semiconductor
Part Number 2SK1095
Manufacturer Hitachi Semiconductor
Title Silicon N-Channel MOSFET
Description www..com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High .
Features



• Low on-resistance High speed switching Low drive current 4 V gate drive device
  – Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc.

Datasheet PDF File 2SK1095 File

2SK1095   2SK1095   2SK1095  






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