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2SD1709

Inchange Semiconductor
Part Number 2SD1709
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device perform...
Features Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain tf Fall Time IC= 0.5A ; VCE= 5V IC= 4A , IB1= 0.8A ; IB2= 1.6A PW=20μs; Duty C...

Published Sep 18, 2011
Datasheet PDF File 2SD1709 File

2SD1709   2SD1709   2SD1709  




2SD1707

INCHANGE
Part Number 2SD1707
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8.
Features V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 8A; IB= 0.4A VBE(sat)-2 Base -Emitter Saturation Voltage .

Datasheet PDF File 2SD1707 File

2SD1707   2SD1707   2SD1707  




2SD1707

Panasonic Semiconductor
Part Number 2SD1707
Manufacturer Panasonic Semiconductor
Title Silicon NPN Transistor
Description Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1156 21.0±0.5 15.0±0.3 11.0±.
Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• Full-pack package which can be installed to the heat sink with one screw φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2
■ Absolut.

Datasheet PDF File 2SD1707 File

2SD1707   2SD1707   2SD1707  




2SD1706

Inchange Semiconductor
Part Number 2SD1706
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7.
Features (BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.35A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 7A; IB= 0.35A VBE(sat)-2 Base -Emitter Saturation Volta.

Datasheet PDF File 2SD1706 File

2SD1706   2SD1706   2SD1706  




2SD1705

INCHANGE
Part Number 2SD1705
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.
Features (BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat)-2 Base -Emitter Saturation Voltage .

Datasheet PDF File 2SD1705 File

2SD1705   2SD1705   2SD1705  






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