logo

2SC3808

Sanyo Semicon Device
Part Number 2SC3808
Manufacturer Sanyo Semicon Device
Title NPN Epitaxial Planar Silicon Transistor
Description Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applicati...
Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter...

Published Mar 22, 2005
Datasheet PDF File 2SC3808 File

2SC3808   2SC3808   2SC3808  




2SC380TM

BLUE ROCKET ELECTRONICS
Part Number 2SC380TM
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon NPN transistor
Description .
Features .

Datasheet PDF File 2SC380TM File

2SC380TM   2SC380TM   2SC380TM  




2SC380TM

WEJ
Part Number 2SC380TM
Manufacturer WEJ
Title NPN Transistor
Description .
Features .

Datasheet PDF File 2SC380TM File

2SC380TM   2SC380TM   2SC380TM  




2SC380TM

SeCoS
Part Number 2SC380TM
Manufacturer SeCoS
Title NPN Transistor
Description 2SC380TM Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & le.
Features
 TO-92 G H High Frequency Amplifier Applications J Emitter Collector
Base D REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 CLASSIFICATION OF hFE Product-Rank Range Marking 2SC380TM-R 2SC380TM-O 2SC380T.

Datasheet PDF File 2SC380TM File

2SC380TM   2SC380TM   2SC380TM  




2SC380TM

Toshiba Semiconductor
Part Number 2SC380TM
Manufacturer Toshiba Semiconductor
Title Silicon NPN Transistor
Description 2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm · High powe.
Features 12 V, IC = 2 mA (Note) VCE (sat) VBE fT Cob Cc・rbb’ Gpe IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1) Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min .

Datasheet PDF File 2SC380TM File

2SC380TM   2SC380TM   2SC380TM  




2SC3809

NEC
Part Number 2SC3809
Manufacturer NEC
Title NPN Silicon Transistor
Description DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE .
Features
• The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating PACKAGE DIMENSIONS (in millimeters) 5.0 MIN. 1.25 ± 0.1 5.0 MIN. 3.5 +0.3 -0.2 2 0.6 ± 0.1 current range.
• Dual chips in one package can achieve high performance for di.

Datasheet PDF File 2SC3809 File

2SC3809   2SC3809   2SC3809  






Since 2006. 0PDF.com,