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2SC3807C

Sanyo Semicon Device
Part Number 2SC3807C
Manufacturer Sanyo Semicon Device
Title NPN Epitaxial Planar Silicon Transistor
Description www..com Ordering number : ENA0439 2SC3807C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C Appli...
Features




• Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte...

Published Oct 1, 2007
Datasheet PDF File 2SC3807C File

2SC3807C   2SC3807C   2SC3807C  




2SC3807MP

Sanyo Semicon Device
Part Number 2SC3807MP
Manufacturer Sanyo Semicon Device
Title NPN Epitaxial Planar Silicon Transistor
Description www..com Ordering number : ENA0629 2SC3807MP SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP App.
Features




• Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO(VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter.

Datasheet PDF File 2SC3807MP File

2SC3807MP   2SC3807MP   2SC3807MP  




2SC3807

JCET
Part Number 2SC3807
Manufacturer JCET
Title NPN Transistor
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR (NPN) TO-126 FEATURES z Low freque.
Features z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage z High VEBO MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VE.

Datasheet PDF File 2SC3807 File

2SC3807   2SC3807   2SC3807  




2SC3807

BLUE ROCKET ELECTRONICS
Part Number 2SC3807
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon NPN transistor
Description TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features IC ,hFE ,VCE(sat),VEBO 。 Large current capacity, high DC cur.
Features IC ,hFE ,VCE(sat),VEBO 。 Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. / Applications 。 low frequency general-purpose amplifiers, drivers. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classific.

Datasheet PDF File 2SC3807 File

2SC3807   2SC3807   2SC3807  




2SC3807

Foshan Eming Electronics
Part Number 2SC3807
Manufacturer Foshan Eming Electronics
Title SILICON NPN TRANSISTOR
Description 2SC3807(3DA3807) NPN /SILION NPN TRANSISTOR :。 Purpose: low frequency general-purpose amplifiers, drivers. : IC , hFE ,VCE(sat),VEBO 。 Features.
Features Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICM PC PC(TC=25℃) Tj Tstg 30 25 15 2.0 4.0 1.2 15 150 -55~150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25.

Datasheet PDF File 2SC3807 File

2SC3807   2SC3807   2SC3807  






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