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10N60

Inchange Semiconductor
Part Number 10N60
Manufacturer Inchange Semiconductor
Title N-Channel Mosfet Transistor
Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resis...
Features
·Drain Current
  –ID= 9.5A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max)
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXI...

Published Jul 14, 2016
Datasheet PDF File 10N60 File

10N60   10N60   10N60  




10N60

nELL
Part Number 10N60
Manufacturer nELL
Title N-Channel Power MOSFET
Description The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakd.
Features RDS(ON) = 0.8Ω@VGS = 10V Ultra low gate charge(57nC max.) Low reverse transfer capacitance (CRSS = 18pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (10N60A) GDS TO-220F (10N60AF) D G S TO-263(D2PAK) (10N6.

Datasheet PDF File 10N60 File

10N60   10N60   10N60  




10N60

CHONGQING PINGYANG
Part Number 10N60
Manufacturer CHONGQING PINGYANG
Title N-CHANNEL MOSFET
Description 10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100.
Features
 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gat.

Datasheet PDF File 10N60 File

10N60   10N60   10N60  




10N60

Unisonic Technologies
Part Number 10N60
Manufacturer Unisonic Technologies
Title N-CHANNEL POWER MOSFET
Description The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate cha.
Features *Pb-free plating product number: 10N60L * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Normal Lead .

Datasheet PDF File 10N60 File

10N60   10N60   10N60  






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