| Part Number | TSD5N60M |
| Manufacturer | Truesemi |
| Title | N-Channel MOSFET |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to ... |
| Features |
- 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
GDS
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Pa... |
| Published | Apr 12, 2017 |
| Datasheet |
 TSD5N60M File
|
| Part Number | TSD5N60S |
| Manufacturer | Truesemi |
| Title | N-Channel MOSFET |
| Description | SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance an. |
| Features |
• 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.77Ω • Ultra Low Gate Charge (typ. Qg = 15nC) • 100% avalanche tested • Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSD5N60S 5* 4.5* IDM Drain Current - . |
| Datasheet |
TSD5N60S File
|
