| Part Number | TK4P60D |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60D
1: Gate (G) 2: ... |
| Published | Sep 5, 2014 |
| Datasheet |
 TK4P60D File
|
| Part Number | TK4P60DB |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor TK4P60DB ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS . |
| Features |
·Low drain-source on-resistance: RDS(ON) = 2Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY. |
| Datasheet |
TK4P60DB File
|
| Part Number | TK4P60DB |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DB 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RD. |
| Features |
(1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60DB
DPAK
1: G. |
| Datasheet |
TK4P60DB File
|
| Part Number | TK4P60DA |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK4P60DA ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low. |
| Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
| Datasheet |
TK4P60DA File
|
| Part Number | TK4P60DA |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS. |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60DA
D. |
| Datasheet |
TK4P60DA File
|
