| Part Number | TH58100FT |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| Description | The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 5... |
| Features |
· Organization Memory cell allay 528 ´ 128K ´ 8 ´ 2 Register 528 ´ 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/output Command control · · · · Power supply VCC = ... |
| Published | Apr 16, 2005 |
| Datasheet |
 TH58100FT File
|
| Part Number | TH58100FTI |
| Manufacturer | Toshiba Semiconductor |
| Title | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| Description | The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 5. |
| Features |
• Organization Memory cell allay 528 × 128K × 8 × 2 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/output Command control • • • • Power supply VCC = . |
| Datasheet |
TH58100FTI File
|
