Part Number | TC55B329J |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Title | 32K x 9-Bit BiCMOS Static RAM |
Description | The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V s... |
Features |
low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55... |
Published | Jun 8, 2006 |
Datasheet | TC55B329J File |
Part Number | TC55B329P-12 |
Manufacturer | Toshiba |
Title | 32K x 9-Bit BiCMOS Static RAM |
Description | The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V s. |
Features |
low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55. |
Datasheet | TC55B329P-12 File |
Part Number | TC55B329P-10 |
Manufacturer | Toshiba |
Title | 32K x 9-Bit BiCMOS Static RAM |
Description | The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V s. |
Features |
low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55. |
Datasheet | TC55B329P-10 File |
Part Number | TC55B329P |
Manufacturer | Toshiba |
Title | 32K x 9-Bit BiCMOS Static RAM |
Description | The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V s. |
Features |
low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55. |
Datasheet | TC55B329P File |
Part Number | TC55B329J-12 |
Manufacturer | Toshiba |
Title | 32K x 9-Bit BiCMOS Static RAM |
Description | The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V s. |
Features |
low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55. |
Datasheet | TC55B329J-12 File |
Part Number | TC55B329J-10 |
Manufacturer | Toshiba |
Title | 32K x 9-Bit BiCMOS Static RAM |
Description | The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V s. |
Features |
low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55. |
Datasheet | TC55B329J-10 File |