| Part Number | NTE271 |
| Manufacturer | NTE |
| Title | Silicon Complementary Transistors |
| Description | The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amp... |
| Features |
D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector –Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built –In Base –Emitter Shunt Resistor Absolute Maximum Ratings: Collector –Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . .... |
| Published | Aug 18, 2016 |
| Datasheet |
 NTE271 File
|
| Part Number | NTE278 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor Broadband RF Amp |
| Description | The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable a. |
| Features |
D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz D High Current –Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA Absolute Maximum Ratings: Collector –Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector –Bas. |
| Datasheet |
NTE278 File
|
| Part Number | NTE2764 |
| Manufacturer | NTE |
| Title | 64K Erasable EPROM |
| Description | The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type pack. |
| Features |
an output enable control and offers a standby mode with an attendant 67% savings in power consumption. A distinctive feature of the NTE2764 is a separate output control, output enable (OE) from the chip enable control (CE). The OE control eliminates bus contention in multiple –bus microprocessor syst. |
| Datasheet |
NTE2764 File
|
| Part Number | NTE276 |
| Manufacturer | NTE Electronics |
| Title | Silicon Controlled Rectifier |
| Description | www..com NTE276 Silicon Controlled Rectifier (SCR) Gate Controlled Switch Features: D Gate Turn−Off Thyristor D High Speed Power Switc. |
| Features |
D Gate Turn−Off Thyristor D High Speed Power Switching D TV Horizontal Output D Inverter and Converter Application D Supplied in a Japanese TO66 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Non−Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), VDSM . |
| Datasheet |
NTE276 File
|
| Part Number | NTE275 |
| Manufacturer | NTE |
| Title | Silicon Complementary Transistors |
| Description | The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, lo. |
| Features |
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector –Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector –Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built –In Base –Emitter Shunt Resistors Absolute Maximum Ratings: Collector –Emitter Volt. |
| Datasheet |
NTE275 File
|
| Part Number | NTE274 |
| Manufacturer | NTE |
| Title | Silicon Complementary Transistors Darlington Power Amplifier / Switch |
| Description | The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, lo. |
| Features |
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector –Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector –Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built –In Base –Emitter Shunt Resistors Absolute Maximum Ratings: Collector –Emitter Volta. |
| Datasheet |
NTE274 File
|
