| Part Number | NCE65T1K2 |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Super Junction Power MOSFET |
| Description | The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super ... |
| Features |
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP. ID 650 950 4 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power ... |
| Published | Jun 3, 2018 |
| Datasheet |
 NCE65T1K2 File
|
| Part Number | NCE65T1K2K |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Super Junction Power MOSFET |
| Description | The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super . |
| Features |
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP. ID 650 950 4 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power . |
| Datasheet |
NCE65T1K2K File
|
| Part Number | NCE65T1K2I |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Super Junction Power MOSFET |
| Description | The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super . |
| Features |
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP. ID 650 950 4 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power . |
| Datasheet |
NCE65T1K2I File
|
| Part Number | NCE65T1K2F |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Super Junction Power MOSFET |
| Description | The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super . |
| Features |
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP. ID 650 950 4 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power . |
| Datasheet |
NCE65T1K2F File
|
| Part Number | NCE65T1K2D |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Super Junction Power MOSFET |
| Description | The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super . |
| Features |
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP. ID 650 950 4 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power . |
| Datasheet |
NCE65T1K2D File
|
