| Part Number | MTP5N40 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFETs |
| Description | ... |
| Features |
... |
| Published | Nov 2, 2005 |
| Datasheet |
 MTP5N40 File
|
| Part Number | MTP5N40E |
| Manufacturer | ON Semiconductor |
| Title | High Energy Power FET |
| Description | MTP5N40E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET i. |
| Features |
5.0 AMPERES, 400 VOLTS
RDS(on) = 1.0 W
TO−220AB CASE 221A−06
Style 5
D
®G
S
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics . |
| Datasheet |
MTP5N40E File
|
| Part Number | MTP5N40E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP5N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP5N40E Mo. |
| Features |
o –Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode D TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM ® G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Volta. |
| Datasheet |
MTP5N40E File
|
