| Part Number | MSS39 |
| Manufacturer | Aeroflex |
| Title | P-Type Silicon Schottky Diodes |
| Description | The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in mic... |
| Features |
• Very low 1/f Noise • Detector applications to 40 GHz • Chip, beam lead or packaged devices Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated... |
| Published | Jul 20, 2018 |
| Datasheet |
 MSS39 File
|
| Part Number | MSS39-152-H20 |
| Manufacturer | MA-COM |
| Title | P-Type Silicon Schottky Diodes |
| Description | The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetec. |
| Features |
Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip . |
| Datasheet |
MSS39-152-H20 File
|
| Part Number | MSS39-152-E25 |
| Manufacturer | MA-COM |
| Title | P-Type Silicon Schottky Diodes |
| Description | The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetec. |
| Features |
Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip . |
| Datasheet |
MSS39-152-E25 File
|
| Part Number | MSS39-152-B10B |
| Manufacturer | MA-COM |
| Title | P-Type Silicon Schottky Diodes |
| Description | The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetec. |
| Features |
Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip . |
| Datasheet |
MSS39-152-B10B File
|
| Part Number | MSS39-148-H20 |
| Manufacturer | MA-COM |
| Title | P-Type Silicon Schottky Diodes |
| Description | The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetec. |
| Features |
Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip . |
| Datasheet |
MSS39-148-H20 File
|
| Part Number | MSS39-148-E25 |
| Manufacturer | MA-COM |
| Title | P-Type Silicon Schottky Diodes |
| Description | The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetec. |
| Features |
Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip . |
| Datasheet |
MSS39-148-E25 File
|
