| Part Number | MS2601 |
| Manufacturer | ASI |
| Title | NPN RF POWER TRANSISTOR |
| Description | The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz. PACKAGE STYLE 400 x 400 2NL FLG 1 2... |
| Features |
INCLUDE:
• Input/Output Matching • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 0.45 A 34 V 11.5 W @ TC = 25 °C -65 °C to+200 °C -65 °C to+200 °C 13.0 °C/W 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE POUT PG ηC TC = ... |
| Published | Jan 21, 2007 |
| Datasheet |
 MS2601 File
|
| Part Number | MS2604 |
| Manufacturer | Advanced Power Technology |
| Title | RF& MICROWAVE TRANSISTORS |
| Description | The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications. The MS2604 is capable of operation over a wide rang. |
| Features |
• • • • • • 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION • DESCRIPTION: The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications. The MS2604 is capable of operation over a wide rang. |
| Datasheet |
MS2604 File
|
