| Part Number | MPSA29 |
| Manufacturer | Motorola |
| Title | (MPSA28 / MPSA29) Darlington Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA28/D Darlington Transistors NPN Silicon COLLECTOR 3 MPSA28 MPSA29* *Motorola ... |
| Features |
dc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB ... |
| Published | Dec 15, 2005 |
| Datasheet |
 MPSA29 File
|
| Part Number | MPSA29 |
| Manufacturer | Central Semiconductor |
| Title | SILICON NPN DARLINGTON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR MPSA28 and MPSA29 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for . |
| Features |
0
80 100
12
500
625
-65 to +150
200
83.3
MPSA28 MIN MAX
- 100 -- 500 -- 100 80 80 12 - 1.2 - 1.5 - 2.0 10,000 10,000 125 - 8.0
MPSA29 MIN MAX
-- 100 -- 500 - 100 100 100 12 - 1.2 - 1.5 - 2.0 10,000 10,000 125 - 8.0
UNITS V V V mA
mW °C °C/W °C/W
UNITS nA nA nA nA nA V V V V V V
MHz pF
R0 . |
| Datasheet |
MPSA29 File
|
| Part Number | MPSA29 |
| Manufacturer | JCET |
| Title | NPN Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA29 TRANSISTOR (NPN) FEATURES z Darlington Transistor. |
| Features |
z Darlington Transistor
TO – 92 1.EMITTER 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCES VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance F. |
| Datasheet |
MPSA29 File
|
| Part Number | MPSA29 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Darlington Transistor |
| Description | MPSA29 Discrete POWER & Signal Technologies MPSA29 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring e. |
| Features |
Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
MPSA29 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
MPSA29
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol Par. |
| Datasheet |
MPSA29 File
|
| Part Number | MPSA29 |
| Manufacturer | ON Semiconductor |
| Title | (MPSA28 / MPSA29) Darlington Transistors |
| Description | www..com ON Semiconductort Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage. |
| Features |
akdown Voltage (IC = 100 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSA28 MPSA29 ICE. |
| Datasheet |
MPSA29 File
|
| Part Number | MPSA29 |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
| Description | Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC . |
| Features |
VCB=80V, IE=0,
MPSA28 MPSA29
Collector Cut Off Current
ICES VCE=60V, VBE=0, MPSA28
VCE=80V, VBE=0, MPSA29
Emitter Cut Off Current
IEBO VEB=10V, IC = 0
DC Current Gain
*hFE VCE=5V, IC=10mA VCE=5V, IC=100mA
Collector Emitter Saturation Voltage *VCE (sat)
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1m. |
| Datasheet |
MPSA29 File
|
