| Part Number | MJD350 |
| Manufacturer | DIODES (https://www.diodes.com/) |
| Title | HIGH VOLTAGE PNP TRANSISTOR |
| Description | NEW PRODUCT MJD350 HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • High Collector-EmitterVoltage • Idea... |
| Features |
• Epitaxial Planar Die Construction • High Collector-EmitterVoltage • Ideally Suited for Automated Assembly Processes • Ideal for Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: DPAK • Case Material: Molde... |
| Published | Nov 11, 2016 |
| Datasheet |
 MJD350 File
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| Part Number | MJD350 |
| Manufacturer | TAITRON |
| Title | SMD Transistor |
| Description | MJD350 Marking Code MJD350 VCBO Collector-Base Voltage 300 VCEO Collector-Emitter Voltage 300 VEBO Emitter-Base Voltage 3 IC Collecto. |
| Features |
• Designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T . |
| Datasheet |
MJD350 File
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| Part Number | MJD350 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·DPAK for . |
| Features |
h j-a Thermal Resistance,Junction to Ambient 80 ℃/W
MJD350
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Vo. |
| Datasheet |
MJD350 File
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| Part Number | MJD350 |
| Manufacturer | Fairchild |
| Title | High Voltage Power Transistor |
| Description | MJD350 MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Str. |
| Features |
. |
| Datasheet |
MJD350 File
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| Part Number | MJD350 |
| Manufacturer | ST Microelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a r. |
| Features |
. |
| Datasheet |
MJD350 File
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| Part Number | MJD350 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD340/D High Voltage Power Transistors DPAK For Surface Mount Applications • • • . |
| Features |
ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ. |
| Datasheet |
MJD350 File
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