logo

ME95N03T

Matsuki
Part Number ME95N03T
Manufacturer Matsuki
Title N-Channel MOSFET
Description The ME95N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. ...
Features
● RDS(ON)≦6mΩ@VGS=10V
● RDS(ON)≦9mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter PIN CONFIGURATION (TO-220) Top Vi...

Published Mar 22, 2018
Datasheet PDF File ME95N03T File

ME95N03T   ME95N03T   ME95N03T  



ME95N03T-G

Matsuki
Part Number ME95N03T-G
Manufacturer Matsuki
Title N-Channel MOSFET
Description The ME95N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. .
Features
● RDS(ON)≦6mΩ@VGS=10V
● RDS(ON)≦9mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter PIN CONFIGURATION (TO-220) Top Vi.

Datasheet PDF File ME95N03T-G File

ME95N03T-G   ME95N03T-G   ME95N03T-G  



ME95N03-G

Matsuki
Part Number ME95N03-G
Manufacturer Matsuki
Title N-Channel MOSFET
Description The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. Th.
Features
● RDS(ON)≦3.2mΩ@VGS=10V
● RDS(ON)≦4.2mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
● Secondary Synchronous Rect.

Datasheet PDF File ME95N03-G File

ME95N03-G   ME95N03-G   ME95N03-G  



ME95N03

Matsuki
Part Number ME95N03
Manufacturer Matsuki
Title N-Channel MOSFET
Description The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. Th.
Features
● RDS(ON)≦3.2mΩ@VGS=10V
● RDS(ON)≦4.2mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
● Secondary Synchronous Rect.

Datasheet PDF File ME95N03 File

ME95N03   ME95N03   ME95N03  







Since 2006. 0PDF.com,