| Part Number | ME2N7002DW |
| Manufacturer | Matsuki |
| Title | N-Channel MOSFET |
| Description | The ME2N7002DW is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technolog... |
| Features |
● ESD Rating 2KV HBM ● 3-pin SOT-323 package ● Pb-free plating ; RoHS compliant (green Product) Mechanical data ● High density cell design for low RDS(ON) ● Very low leakage current in off condition ● Advanced trench process technology ● High-speed switching. ● The soldering temperature and time sha... |
| Published | Mar 20, 2018 |
| Datasheet |
 ME2N7002DW File
|
| Part Number | ME2N7002DKW-G |
| Manufacturer | Matsuki |
| Title | Dual N-Channel MOSFET |
| Description | The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench te. |
| Features |
● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.5V ● RDS(ON)≦4.5Ω@VGS=3V ● ESD Protection HBM >2KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Displ. |
| Datasheet |
ME2N7002DKW-G File
|
| Part Number | ME2N7002DA-G |
| Manufacturer | Matsuki |
| Title | N-Channel MOSFET |
| Description | The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| Features |
● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Swit. |
| Datasheet |
ME2N7002DA-G File
|
| Part Number | ME2N7002DA |
| Manufacturer | Matsuki |
| Title | N-Channel MOSFET |
| Description | The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| Features |
● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Swit. |
| Datasheet |
ME2N7002DA File
|
| Part Number | ME2N7002D2KW-G |
| Manufacturer | Matsuki |
| Title | Dual N-Channel MOSFET |
| Description | The ME2N7002D2KW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench t. |
| Features |
● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.5V ● RDS(ON)≦4.5Ω@VGS=3V ● ESD Protection HBM >2KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Displ. |
| Datasheet |
ME2N7002D2KW-G File
|
