| Part Number | ME2320D |
| Manufacturer | Matsuki |
| Title | N-Channel 20V (D-S) MOSFET |
| Description | The ME2320D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. T... |
| Features |
RDS(ON)=21m @VGS=4.5V
RDS(ON)=25 m @VGS=2.5V
RDS(ON)=33 m @VGS=1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DS... |
| Published | Mar 20, 2018 |
| Datasheet |
 ME2320D File
|
| Part Number | ME2320DS-G |
| Manufacturer | Matsuki |
| Title | N-Channel 20V (D-S) MOSFET |
| Description | The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. . |
| Features |
● RDS(ON)=21mΩ@VGS=4.5V ● RDS(ON)=25 mΩ@VGS=2.5V ● RDS(ON)=33 mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Conver. |
| Datasheet |
ME2320DS-G File
|
| Part Number | ME2320DS |
| Manufacturer | Matsuki |
| Title | N-Channel 20V (D-S) MOSFET |
| Description | The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. . |
| Features |
● RDS(ON)=21mΩ@VGS=4.5V ● RDS(ON)=25 mΩ@VGS=2.5V ● RDS(ON)=33 mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Conver. |
| Datasheet |
ME2320DS File
|
| Part Number | ME2320D-G |
| Manufacturer | Matsuki |
| Title | N-Channel 20V (D-S) MOSFET |
| Description | The ME2320D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. T. |
| Features |
RDS(ON)=21m @VGS=4.5V
RDS(ON)=25 m @VGS=2.5V
RDS(ON)=33 m @VGS=1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DS. |
| Datasheet |
ME2320D-G File
|
