| Part Number | IXFH20N80Q |
| Manufacturer | IXYS Corporation |
| Title | HiPerFETTM Power MOSFETs Q-Class |
| Description | Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR V... |
| Features |
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Q... |
| Published | Apr 5, 2005 |
| Datasheet |
 IXFH20N80Q File
|
| Part Number | IXFH20N80P |
| Manufacturer | IXYS Corporation |
| Title | PolarHV HiPerFET Power MOSFET |
| Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS. |
| Features |
D = Drain Tab = Drain
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µ. |
| Datasheet |
IXFH20N80P File
|
