| Part Number | IXFH14N80P |
| Manufacturer | IXYS Corporation |
| Title | PolarHV HiPerFET Power MOSFET |
| Description | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P I... |
| Features |
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
720 mΩ
Easy to mount Space savings High power density
DS99593E(07/06)
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| Published | May 30, 2011 |
| Datasheet |
 IXFH14N80P File
|
| Part Number | IXFH14N80 |
| Manufacturer | IXYS Corporation |
| Title | HiPerFET Power MOSFETs |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 80. |
| Features |
300 -55 ... +150 150 -55 ... +150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier • • • • PD TJ TJM Tstg TL . |
| Datasheet |
IXFH14N80 File
|
