| Part Number | IRFR410B |
| Manufacturer | Fairchild Semiconductor |
| Title | 500V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced... |
| Features |
• • • • • • 0.9A, 500V, RDS(on) = 10Ω @VGS = 10 V Low gate charge ( typical 5.1 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! DataShee DataSheet4U.com ! S Absolute Maximum R... |
| Published | Jul 24, 2006 |
| Datasheet |
 IRFR410B File
|
| Part Number | IRFR4105ZPBF |
| Manufacturer | International Rectifier |
| Title | AUTOMOTIVE MOSFET |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on. |
| Features |
l l l l l l
IRFR4105ZPbF IRFU4105ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V
G S
RDS(on) = 24.5mΩ ID = 30A
Description
Specifically designed for Automotiv. |
| Datasheet |
IRFR4105ZPBF File
|
| Part Number | IRFR4105Z |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤24.5mΩ ·Enhancement mode: ·100% aval. |
| Features |
·Static drain-source on-resistance: RDS(on)≤24.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V. |
| Datasheet |
IRFR4105Z File
|
| Part Number | IRFR4105Z |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on. |
| Features |
● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 24.5mΩ ID = 30A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest . |
| Datasheet |
IRFR4105Z File
|
| Part Number | IRFR4105PbF |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | l HEXFET® Power MOSFET D VDSS = 55V G S RDS(on) = 0.045Ω ID = 27A Fifth Generation HEXFETs from International Rectifier utilize advanced proc. |
| Features |
T C = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche En. |
| Datasheet |
IRFR4105PbF File
|
