Part Number | IRFR4104 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | isc N-Channel MOSFET Transistor IRFR4104, IIRFR4104 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.5mΩ ·Enhancement mode: ·100% avalanc... |
Features |
·Static drain-source on-resistance: RDS(on)≤5.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 V... |
Published | Oct 13, 2020 |
Datasheet |
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Part Number | IRFR4104 |
Manufacturer | International Rectifier |
Title | Power MOSFET |
Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on. |
Features |
● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 5.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p. |
Datasheet |
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