| Part Number | IRFR110 |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resi... |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation pow... |
| Published | Dec 13, 2008 |
| Datasheet |
 IRFR110 File
|
| Part Number | IRFR110 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFETs |
| Description | IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode sili. |
| Features |
• 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Component. |
| Datasheet |
IRFR110 File
|
| Part Number | IRFR110 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features |
. |
| Datasheet |
IRFR110 File
|
| Part Number | IRFR110 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFETs |
| Description | Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power . |
| Features |
• 4.7A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Componen. |
| Datasheet |
IRFR110 File
|
