| Part Number | IRFI614A |
| Manufacturer | Fairchild Semiconductor |
| Title | Power MOSFET |
| Description | $GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate... |
| Features |
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TS... |
| Published | Aug 4, 2016 |
| Datasheet |
 IRFI614A File
|
| Part Number | IRFI614GPBF |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | www..com PD - 95605 IRFI614GPbF • Lead-Free www.irf.com 1 7/28/04 IRFI614GPbF 2 www.irf.com IRFI614GPbF www.irf.com 3 IRFI6. |
| Features |
are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L OT CO. |
| Datasheet |
IRFI614GPBF File
|
| Part Number | IRFI614G |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features |
. |
| Datasheet |
IRFI614G File
|
| Part Number | IRFI614B |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced. |
| Features |
• • • • • • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM . |
| Datasheet |
IRFI614B File
|
| Part Number | IRFI614B |
| Manufacturer | Fairchild Semiconductor |
| Title | 250V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced. |
| Features |
• • • • • • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM . |
| Datasheet |
IRFI614B File
|
