Part Number | IRF9540NL |
Manufacturer | INCHANGE |
Title | P-Channel MOSFET |
Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process techno... |
Features |
·Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL... |
Published | Oct 30, 2020 |
Datasheet | IRF9540NL File |
Part Number | IRF9540NL |
Manufacturer | International Rectifier |
Title | Power MOSFET |
Description | l l D VDSS = -100V RDS(on) = 0.117Ω G ID = -23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique. |
Features |
sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9540L) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Dra. |
Datasheet | IRF9540NL File |