| Part Number | IRF247 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.34Ω(Max) APPLICATIONS ·Sw... |
| Features |
L CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Dr... |
| Published | Jul 31, 2016 |
| Datasheet |
 IRF247 File
|
| Part Number | IRF247 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed . |
| Features |
• 14A and 13A, 275V and 250V • rDS(ON) = 0.28Ω and 0.34Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 275V, 250V DC Rated - 120V AC Line System Operation • Related Literature - TB334 . |
| Datasheet |
IRF247 File
|
