| Part Number | I2N60 |
| Manufacturer | ROUM |
| Title | 2A 600V N-channel Enhancement Mode Power MOSFET |
| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performa... |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and high... |
| Published | Jan 16, 2019 |
| Datasheet |
 I2N60 File
|
| Part Number | I2N60 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakd. |
| Features |
RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
12 600 0.8 @ V. |
| Datasheet |
I2N60 File
|
