| Part Number | FRM9130H |
| Manufacturer | Intersil |
| Title | P-Channel Power MOSFET |
| Description | The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to... |
| Features |
• 6A, -100V, RDS(on) = 0.550Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically ... |
| Published | Apr 23, 2005 |
| Datasheet |
 FRM9130H File
|
| Part Number | FRM9130R |
| Manufacturer | Intersil |
| Title | P-Channel Power MOSFET |
| Description | The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to. |
| Features |
• 6A, -100V, RDS(on) = 0.550Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically . |
| Datasheet |
FRM9130R File
|
| Part Number | FRM9130D |
| Manufacturer | Intersil |
| Title | P-Channel Power MOSFET |
| Description | The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to. |
| Features |
• 6A, -100V, RDS(on) = 0.550Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically . |
| Datasheet |
FRM9130D File
|
| Part Number | FRM9130 |
| Manufacturer | Inchange Semiconductor |
| Title | P-Channel MOSFET Transistor |
| Description | ·-6A, -100V, RDS(on) = 0.55Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and proces. |
| Features |
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FRM9130
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS. |
| Datasheet |
FRM9130 File
|
