| Part Number | FRE9160H |
| Manufacturer | Intersil |
| Title | P-Channel Power MOSFET |
| Description | The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with r... |
| Features |
• 30A, -100V, RDS(on) = 0.095Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically... |
| Published | Apr 23, 2005 |
| Datasheet |
 FRE9160H File
|
| Part Number | FRE9160R |
| Manufacturer | Intersil |
| Title | P-Channel Power MOSFET |
| Description | The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with r. |
| Features |
• 30A, -100V, RDS(on) = 0.095Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically. |
| Datasheet |
FRE9160R File
|
| Part Number | FRE9160D |
| Manufacturer | Intersil |
| Title | P-Channel Power MOSFET |
| Description | The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with r. |
| Features |
• 30A, -100V, RDS(on) = 0.095Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically. |
| Datasheet |
FRE9160D File
|
