Part Number | FQPF47P06 |
Manufacturer | Fairchild Semiconductor |
Title | P-Channel MOSFET |
Description | P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU Features • -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ. 84 n... |
Features |
• -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe an... |
Published | May 21, 2014 |
Datasheet | FQPF47P06 File |
Part Number | FQPF47P06 |
Manufacturer | ON Semiconductor |
Title | P-Channel MOSFET |
Description | This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET techno. |
Features |
• −30 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V, ID = −15 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.com VDSS −60 V RDS(ON) MAX 26 mW @ −10 V S ID MAX −30 A G D P−Channel MOSFET GDS . |
Datasheet | FQPF47P06 File |