| Part Number | FQP13N50 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advan... |
| Features |
• 12.5 A, 500 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 6.25 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-... |
| Published | Apr 1, 2005 |
| Datasheet |
 FQP13N50 File
|
| Part Number | FQP13N50CF |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a. |
| Features |
• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are pr. |
| Datasheet |
FQP13N50CF File
|
| Part Number | FQP13N50C |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technol. |
| Features |
• 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current . |
| Datasheet |
FQP13N50C File
|
| Part Number | FQP13N50C |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a. |
| Features |
• 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Curre. |
| Datasheet |
FQP13N50C File
|
