| Part Number | FQN1N60C |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel QFET MOSFET |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advan... |
| Features |
• 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.15 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Vol... |
| Published | Nov 14, 2014 |
| Datasheet |
 FQN1N60C File
|
| Part Number | FQN1N60C |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOS. |
| Features |
• 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V, ID = 0.15 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain to Source Voltage Gate to Source Voltag. |
| Datasheet |
FQN1N60C File
|
