| Part Number | FQL40N50F |
| Manufacturer | Fairchild Semiconductor |
| Title | 500V N-Channel MOSFET |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advan... |
| Features |
• 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge (Typ. 155 nC) • Low Crss (Typ. 95 pF) • 100% Avalanche Tested • Fast Recovery Body Diode (Max. 250 ns) D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/... |
| Published | Apr 1, 2005 |
| Datasheet |
 FQL40N50F File
|
| Part Number | FQL40N50 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQL40N50 ·FEATURES ·High breakdown voltage ·Fast Switching Speed ·100% avalanche tested ·. |
| Features |
·High breakdown voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power switching ·Power factor correction,motor drive and welding machine ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR. |
| Datasheet |
FQL40N50 File
|
| Part Number | FQL40N50 |
| Manufacturer | Fairchild Semiconductor |
| Title | 500V N-Channel MOSFET |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advan. |
| Features |
• 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge (Typ. 155 nC) • Low Crss (Typ. 95 pF) • 100% Avalanche Tested D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source. |
| Datasheet |
FQL40N50 File
|
