| Part Number | FQI6N90 |
| Manufacturer | Fairchild Semiconductor |
| Title | 900V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a... |
| Features |
• • • • • • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGS... |
| Published | Apr 1, 2005 |
| Datasheet |
 FQI6N90 File
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