Part Number | FNK08N03D |
Manufacturer | FNK |
Title | N-Channel Power MOSFET |
Description | TheFNK08N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app... |
Features |
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability ... |
Published | Mar 23, 2018 |
Datasheet |
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Part Number | FNK08N03DA |
Manufacturer | FNK |
Title | N-Channel Power MOSFET |
Description | The FNK08N03DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of a. |
Features |
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability . |
Datasheet |
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Part Number | FNK08N03C |
Manufacturer | FNK |
Title | N-Channel Power MOSFET |
Description | TheFNK08N03C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app. |
Features |
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability . |
Datasheet |
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