| Part Number | FNK03N02 |
| Manufacturer | FNK |
| Title | N-Channel Power MOSFET |
| Description | The FNK03N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app... |
| Features |
● VDS =30V,ID =100A RDS(ON) <2.5mΩ @ VGS=10V (Typ:1.9mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabili... |
| Published | Mar 23, 2018 |
| Datasheet |
 FNK03N02 File
|
| Part Number | FNK03N06E |
| Manufacturer | FNK |
| Title | N-Channel Power MOSFET |
| Description | The FNK03N06E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap. |
| Features |
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V RDS(ON) <7.5mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power s. |
| Datasheet |
FNK03N06E File
|
| Part Number | FNK03N03 |
| Manufacturer | FNK |
| Title | N-Channel Power MOSFET |
| Description | The FNK03N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app. |
| Features |
● VDS =30V,ID =100A RDS(ON) <3.2mΩ @ VGS=10V (Typ:2.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabili. |
| Datasheet |
FNK03N03 File
|
| Part Number | FNK03N02L |
| Manufacturer | FNK |
| Title | N-Channel Power MOSFET |
| Description | The FNK03N02L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap. |
| Features |
● VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V (Typ:1.4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabili. |
| Datasheet |
FNK03N02L File
|
| Part Number | FNK03N02E |
| Manufacturer | FNK |
| Title | N-Channel Power MOSFET |
| Description | The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap. |
| Features |
● VDS =30V,ID =140A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high. |
| Datasheet |
FNK03N02E File
|
| Part Number | FNK03N02D |
| Manufacturer | FNK |
| Title | N-Channel Power MOSFET |
| Description | The FNK03N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap. |
| Features |
● VDS =30V,ID =140A RDS(ON) <3.5 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high. |
| Datasheet |
FNK03N02D File
|
