| Part Number | FDT86106LZ |
| Manufacturer | Fairchild Semiconductor |
| Title | MOSFET |
| Description | January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench techno... |
| Features |
General Description
January 2013
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
HBM ESD protecti... |
| Published | Jan 11, 2017 |
| Datasheet |
 FDT86106LZ File
|
| Part Number | FDT86106LZ |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−stat. |
| Features |
Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package HBM ESD Protection Level > 3 kV Typical (Note 4) 1. |
| Datasheet |
FDT86106LZ File
|
