| Part Number | F2211 |
| Manufacturer | Polyfet RF Devices |
| Title | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifi... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F2211
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 15 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM R... |
| Published | Mar 30, 2005 |
| Datasheet |
 F2211 File
|
| Part Number | F2213 |
| Manufacturer | Polyfet RF Devices |
| Title | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifi. |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F2213
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 16 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATING. |
| Datasheet |
F2213 File
|
| Part Number | F2212 |
| Manufacturer | Polyfet RF Devices |
| Title | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifi. |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F2212
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM R. |
| Datasheet |
F2212 File
|
