| Part Number | F2012 |
| Manufacturer | Polyfet RF Devices |
| Title | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifi... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F2012
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM ... |
| Published | Mar 30, 2005 |
| Datasheet |
 F2012 File
|
| Part Number | F2013 |
| Manufacturer | Polyfet RF Devices |
| Title | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifi. |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F2013
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATING. |
| Datasheet |
F2013 File
|
