| Part Number | CHA2193 |
| Manufacturer | United Monolithic Semiconductors |
| Title | 20-30GHz Low Noise Amplifier |
| Description | The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication syst... |
| Features |
■ 2.0 dB noise figure ■ 18 dB ± 1dB gain ■ 8 dBm output power (-1dB gain comp.) ■ Very good broadband input matching ■ DC power consumption, 60mA @ 3.5V ■ Chip size : 2.07 x 1.03 x 0.10 mm 20 18 Gain (dB) 16 14 12 10 8 6 4 NF (dB) 2 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Frequency ( GHz ) Typi... |
| Published | Feb 2, 2016 |
| Datasheet |
 CHA2193 File
|
| Part Number | CHA2194 |
| Manufacturer | United Monolithic Semiconductors |
| Title | 36-44GHz Low Noise Amplifier |
| Description | The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipo. |
| Features |
Broad band performance 36-44GHz 3dB noise figure 19dB gain, ± 0.5dB gain flatness Low DC power consumption, 45mA 20dBm 3rd order intercept point Chip size : 1.670 x 0.970x 0.1mm
Main Characteristics
Tamb = +25°C
28 25,00 26 24 22 20 18 15,00 16 14 12 10 8 5,00 6 4 2 0 -2 -5,00 -4 -6 -8 -10 -12 -15,. |
| Datasheet |
CHA2194 File
|
| Part Number | CHA2192 |
| Manufacturer | United Monolithic Semiconductors |
| Title | 24-26.5GHz Low Noise Amplifier |
| Description | The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication system. |
| Features |
■ 1.8 dB noise figure ■ 15 dB ± 1dB gain ■ 10 dBm output power ■ Very good broadband input matching ■ DC power consumption, 40mA @ 3.5V ■ Chip size : 1.67 x 0.97 x 0.10 mm Gain & NF ( dB ) 20 18 16 Gain 14 12 10 8 6 4 NF 2 0 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) Typical on Wafer Measurem. |
| Datasheet |
CHA2192 File
|
| Part Number | CHA2190 |
| Manufacturer | United Monolithic Semiconductors |
| Title | 20-30GHz Low Noise Amplifier |
| Description | The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25. |
| Features |
Broad band performance 20-30GHz 2.2dB noise figure 15dB gain, ± 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1.670 x 1.03x 0.1mm
dBSij & NF ( dB )
18 14 10
6 2 -2 -6 -10 -14 -18 -22 -26
14
dBS11
dBS21
dBS22
16 18 20 22 24 26 28 30
Frequency ( G. |
| Datasheet |
CHA2190 File
|
