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IS45S16160G

ISSI
Part Number IS45S16160G
Manufacturer ISSI
Title 256Mb SYNCHRONOUS DRAM
Description IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 DECEMBER 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166...
Features
• Clock frequency: 200,166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: S...

Published Jan 1, 2019
Datasheet PDF File IS45S16160G File

IS45S16160G   IS45S16160G   IS45S16160G  




IS45S16160L

ISSI
Part Number IS45S16160L
Manufacturer ISSI
Title 256Mb SYNCHRONOUS DRAM
Description IS42S83200L, IS42S16160L IS45S83200L, IS45S16160L 32Meg x 8, 16Meg x16 ADVANCED INFORMATION 256Mb SYNCHRONOUS DRAM DECEMBER 2021 FEATURES • .
Features
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Seq.

Datasheet PDF File IS45S16160L File

IS45S16160L   IS45S16160L   IS45S16160L  




IS45S16160J

ISSI
Part Number IS45S16160J
Manufacturer ISSI
Title 256Mb SYNCHRONOUS DRAM
Description IS42S83200J, IS42S16160J IS45S83200J, IS45S16160J 32Meg x 8, 16Meg x16 SEPTEMBER 2020 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 1.
Features
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequenti.

Datasheet PDF File IS45S16160J File

IS45S16160J   IS45S16160J   IS45S16160J  




IS45S16160D

Integrated Silicon Solution
Part Number IS45S16160D
Manufacturer Integrated Silicon Solution
Title 256-MBIT SYNCHRONOUS DRAM
Description A0-A12 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O Syste.
Features
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Seque.

Datasheet PDF File IS45S16160D File

IS45S16160D   IS45S16160D   IS45S16160D  




IS45S16160C

Integrated Silicon Solution
Part Number IS45S16160C
Manufacturer Integrated Silicon Solution
Title 256 Mb Single Data Rate Synchronous DRAM
Description - Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz<3-3-3>/-7:143MHz<3-3-3>/-75:133MHz<3-3-3> - Fully synchronous operation refe.
Features Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein.

Datasheet PDF File IS45S16160C File

IS45S16160C   IS45S16160C   IS45S16160C  






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